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BTS721L1 Electronic IC Chips Smart Four Channel Highside Power Switch

ChongMing Group (HK) Int'l Co., Ltd
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BTS721L1 Electronic IC Chips Smart Four Channel Highside Power Switch

Model Number : BTS721L1

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 7800pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Power Switch/Driver 1:1 N-Channel 2.5A PG-DSO-20

Supply voltage : 43 V

Supply voltage for full short circuit protection : 34 V

Operating temperature : -40 ...+150 °C

Storage temperature : -55 ...+150 °C

Electrostatic discharge capability (ESD) (Human Body Model) : 1.0 kV

Load dump protection : 60 V

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Smart Four Channel Highside Power Switch

Features

• Overload protection

• Current limitation

• Short-circuit protection

• Thermal shutdown

• Overvoltage protection (including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection1)

• Undervoltage and overvoltage shutdown with auto-restart and hysteresis

• Open drain diagnostic output

• Open load detection in ON-state

• CMOS compatible input

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load.

Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

• All types of resistive, inductive and capacitive loads

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Maximum Ratings at Tj = 25°C unless otherwise specified

Parameter Symbol Values Unit
Supply voltage(overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection Tj,start =-40 ...+150°C Vbb 34 V
Load current (Short-circuit current, see page 5) IL self-limited A
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI 3) = 2 Ω, td = 200 ms; IN= low or high, each channel loaded with RL = 4.7Ω, VLoad dump4) 60 V

Operating temperature range

Storage temperature range

Tj

Tstg

-40 ...+150

-55 ...+150

°C

Power dissipation (DC)5 Ta = 25°C:

(all channels active) Ta = 85°C:

Ptot

3.7

1.9

W

Inductive load switch-off energy dissipation, single pulse

Vbb =12V, Tj,start =150°C5),

IL = 2.9 A, ZL = 58 mH, 0Ω one channel:

IL = 4.3 A, ZL = 58 mH, 0Ω two parallel channels:

IL = 6.3 A, ZL = 58 mH, 0Ω four parallel channels:

EAS

0.3

0.65

1.5

J
Electrostatic discharge capability (ESD) (Human Body Model) VESD 1.0 kV

Input voltage (DC)

Current through input pin (DC)

Current through status pin (DC)

VIN

IIN

IST

-10 ... +16

±2.0

±5.0

V

mA

Thermal resistance

junction - soldering point5),6) each channel:

junction - ambient5) one channel active:

all channels active:

Rthjs

Rthja

15

41

34

K/W

2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated.

3) RI = internal resistance of the load dump test pulse generator

4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. See page 15

6) Soldering point: upper side of solder edge of device pin 15. See page 15

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