Functional Block Diagrams
DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM.
Features
• VDD = VDDQ = +1.5V ±0.075V
• 1.5V center-terminated push/pull I/O
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• CAS (READ) latency (CL): 5, 6, 7, 8, 9, 10, or 11
• POSTED CAS ADDITIVE latency (AL): 0, CL - 1, CL - 2
• CAS (WRITE) latency (CWL): 5, 6, 7, 8, based on t CK
• Fixed burst leCM GROUPh (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
STOCK LIST
| LM4890MM |
30000 |
NSC |
15+ |
MSOP-8 |
| MHW6342T |
6304 |
MOT |
15+ |
CATV |
| CM450HA-5F |
233 |
MITSUBI |
14+ |
MODULE |
| PM200RSD060 |
230 |
MITSUBISH |
05+ |
MOUDLE |
| PM200RSA060 |
120 |
MITSUBISH |
13+ |
MOUDLE |
| MSM5219BGS-K-7 |
550 |
OKI |
14+ |
QFP |
| PS11003-C |
500 |
MITSUBISH |
12+ |
MODULE |
| MB87020PF-G-BND |
3531 |
FUJITSU |
14+ |
QFP |
| MA2820 |
7689 |
SHINDENG |
16+ |
ZIP |
| 7MBP150RTB060 |
210 |
FUJI |
12+ |
MODULE |
| MBM200HS6B |
629 |
HITACHI |
14+ |
MODULE |
| PM25RSK120 |
320 |
MITSUBISH |
10+ |
MOUDLE |
| QM150DY-H |
150 |
MITSUBISH |
13+ |
MODULE |
| PWB130A40 |
120 |
SANREX |
14+ |
MODULE |
| LA1185 |
3928 |
SANYO |
14+ |
SIP9 |
| BSM25GP120 |
458 |
EUPEC |
15+ |
MODULE |
| LM2750LD-ADJ |
3000 |
NSC |
14+ |
QFN |
| NCN1188MUTAG |
8480 |
ON |
16+ |
UQFN |
| NCN1154MUTAG |
8400 |
ON |
16+ |
UQFN |
| LM2745MTCX |
3000 |
NSC |
14+ |
TSSOP-14 |
| L78L05ABD |
10000 |
ST |
15+ |
SOP8 |
| AT24C08BN-SH |
5000 |
ATMEL |
15+ |
SOP-8 |
| PS21563-P |
500 |
MITSUBISH |
12+ |
MODULE |
| BNX003-01 |
2058 |
MURATA |
14+ |
DIP |
| LTC4441IMSE |
6207 |
LINEAR |
14+ |
MSOP |
| PA0173NLT |
7386 |
PULSE |
16+ |
SOP |
Product Tags:
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MT41J128M16HA-15E:D TR ic chip programmer 1Gb x4 x8 x16 DDR3 SDRAM Images
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