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Complementary Silicon Power Ttransistors BD139

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ChongMing Group (HK) Int'l Co., Ltd

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Model Number : BD139

Certification : new & original

Place of Origin : original factory

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 8000

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32-3

Collector-Base Voltage : 80V

Collector-Emitter Voltage : 80V

Emitter-Base Voltage : 5V

Collector Current : 1.5A

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Complementary Silicon Power Ttransistors BD139 / BD140

DESCRIPTION

It is intented for use in power amplifier and switching applications.

**ABSOLUTE MAXIMUM RATINGS** ( Ta = 25 C)
Parameter	l	Value	Unit
Collector-Base Voltage	V_CBO	80	V
Collector-Emitter Voltage	V_CEO	80	V
Emitter-Base Voltage	V_EBO	5	V
Collector Current	I_C	1.5	A
Base Current	I_B	0.5	A
Total Dissipation at	P_tot	12.5	W
Max. Operating Junction Temperature	T_j	150	^oC
Storage Temperature	T_stg	-55~150^oC	^oC

**ELECTRICAL CHARACTERISTICS ( Ta = 25 ^oC)**
Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Collector Cut-off Current	I_CEO	V_CB=80V, I_E=0	--	--	10	uA
Emitter Cut-off Current	I_EBO	V_EB=5V, I_C=0	--	--	10	uA
Collector-Emitter Sustaining Voltage	V_CEO	I_C=30mA, I_B=0	80	--	--	V
DC Current Gain	h_FE(1) h_FE(2)	V_CE=2V, I_C=0.5A V_CE=2V, I_C=150mA	25 40	-- --	-- 250
Collector-Emitter Saturation Voltage	V_CE(sat)	I_C=0.5A,I_B=50mA	--	--	0.5	V
Base-Emitter Saturation Voltage	V_BE(sat)	V_CE=2V,I_C=0.5A	--	--	1.0	V
Current Gain Bandwidth Product	f_T	V_CE=10V,I_C=500mA	3	--	--	MHz

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power mosfet ic

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